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氮化镓 (GaN) 功率器件
氮化镓（GaN）功率器件
beat365最新版提供具有更高性价比、稳定可靠的氮化镓产品，致力于推动电能转换革命！
■ 技术成熟度高
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
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高效率
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可靠
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服务
高效率
可靠
服务
| Test Item | Standard | Conditions | Results |
| HTRB | JESD22-A108 | Tj =150 °C, VDS = 520 V, 1000 hrs | Pass |
| HAST | JESD22-A110 | 130 °C, 85% RH, 33.3 psi, Bias = 42 V, 96 hrs | Pass |
| TC | JESD22-A104 | -55/150 °C, 2 Cycles/hr, 500 Cycles | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±20 V, 1000 hrs | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±30 V, 1000 hrs | Pass |
| ESD-HBM | JEDEC JS-001 |
G TO D(+/-)
G TO S(+/-)
S TO D(+/-) Step:500 V,800 V,1000 V,1500 V,2000 V,3000 V,4000 V |
Pass (500 V) |
| ESD-CDM | JESD22-C101 |
±30%
Voltage Shift at reference point befpre/after zapping CDM 200 V (±), 500 V (±),700 V (±), 1000 V (±), 1500 V (±), 2000 V (±) |
Pass (1500 V) |
| HVOS | N/A | Temp = 150 °C, VDS = 1050/1100/1150 V | LifeTime >106 hrs at 650 V |
| HTOL | N/A | 200/400 V DC/DC Boost Conversion, Tj = 150 °C | LifeTime > 5000 hrs |
