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| Cascode 型GaN 功率器件的开关过程及损耗分析 | 论文网站 | |
| Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics | 论文网站 | |
| Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx | 论文网站 | |
| Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations | 论文网站 | |
| Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors | 论文网站 | |
| Effects of substrate termination on Ron increase under stress in 650 V GaN power devices | 论文网站 | |
| Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment | 论文网站 |
| RX65T125HS2A Data Sheet Rev.1.4 | 点击下载 | |
| RX65T125PS1B Data Sheet Rev.1.3 | 点击下载 | |
| RX65T300HS2A Data Sheet Rev.1.3 | 点击下载 | |
| RX65T300MS2A Data Sheet Rev.1.1 | 点击下载 | |
| RX90T150PS2A Data Sheet Rev.1.3 | 点击下载 | |
| RX65T125HS1B Data Sheet Rev.1.2 | 点击下载 | |
| RX65T480MS2A Data Sheet Rev.1.0 | 点击下载 | |
| RX65T125PS2A Data Sheet Rev.1.1 | 点击下载 | |
| RX65T125BS2A Data Sheet Rev.1.0 | 点击下载 | |
| RX65T300PS2A Data Sheet Rev.0.1 | 点击下载 | |
| RX65T080PS3A Data Sheet Rev.0.1 | 点击下载 | |
| RX65T125FS2A Data Sheet Rev.0.1 | 点击下载 | |
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| RX65T300DS2A Data Sheet Rev.0.1 | 点击下载 | |
| RX65T300FS2A Data Sheet Rev.0.2 | 点击下载 | |
| RX65T720MS2A Data Sheet Rev.0.1 | 点击下载 |
